Upper electrode and substrate processing apparatus including the same

ABSTRACT

An upper electrode used for a substrate processing apparatus using plasma is provided. The upper electrode includes a bottom surface including a center region and an edge region having a ring shape and surrounding the center region, a first protrusion portion protruding toward plasma from the edge region and having a ring shape, wherein the first protrusion portion includes a first apex corresponding to a radial local maximum point toward the plasma, and a first distance, which is a radial-direction distance between the first apex and a center axis of the upper electrode, is greater than a radius of a substrate.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation of U.S. application Ser. No.17/188,064 filed Mar. 1, 2021 which is based on and claims priorityunder 35 U.S.C. § 119 to Korean Patent Application No. 10-2020-0102156,filed on Aug. 14, 2020, in the Korean Intellectual Property Office, thedisclosure of which is incorporated by reference herein in its entirety.

BACKGROUND

Embodiments relate to an upper electrode and a substrate processingapparatus including the same, and more particularly, to an upperelectrode for performing plasma treatment on a substrate and a substrateprocessing apparatus including the upper electrode.

Examples of a process of manufacturing semiconductor devices include aplasma process including a plasma-induced deposition process, a plasmaetching process, and a plasma cleaning process. Recently, as the needfor miniaturized and highly-integrated semiconductor devices increases,it is required to form a contact structure, having a high aspect ratiowhich is tens to hundreds times higher than a general aspect ratio, on awafer. In a process of forming a structure having a high aspect ratio, afine error of the plasma process may cause defects of each semiconductorproduct. Therefore, various researches are being continuously performedfor accurately controlling a density distribution of plasma in plasmaequipment to enhance the precision and reliability of the plasmaprocess.

SUMMARY

Embodiments provide an upper electrode for performing plasma treatmenthaving enhanced reliability and a substrate processing apparatusincluding the upper electrode.

In an embodiment provided herein, provided is an upper electrode usedfor a substrate processing apparatus using plasma, the upper electrodeincluding: a bottom surface including a center region and an edgeregion, the edge region having a ring shape and surrounding the centerregion; and a first protrusion portion protruding toward the plasma fromthe edge region and having a ring shape, wherein the first protrusionportion includes a first apex corresponding to a local maximum thicknessof the upper electrode in a vertical direction toward the plasma, thebottom surface configured to face a substrate with the plasma between,and a first distance, which is a first radial-direction distance betweenthe first apex and a center axis of the upper electrode, is greater thana radius of the substrate.

In another embodiment provided herein, provided is an upper electrodeused for a substrate processing apparatus, the upper electrode includinga bottom surface configured to face a substrate processed by thesubstrate processing apparatus, wherein the bottom surface includes afirst protrusion portion having a ring shape, the first protrusionportion includes a first apex corresponding to a local maximum thicknessof the upper electrode in a vertical direction, the bottom surfacefacing the substrate, a first distance, which is a distance between thefirst apex and a center axis of the upper electrode, is beginning at andincluding 150 mm and extending to and including 180 mm, the bottomsurface further including a point of minimum thickness corresponding toa radial local minimum point, and the point of minimum thickness occursbetween the center axis and the first protrusion portion.

In yet another embodiment provided herein, provided is an upperelectrode used for a substrate processing apparatus, the upper electrodeincluding: a first portion configured to face a substrate; and a secondportion configured to face a focus ring, the second portion surroundingthe first portion, wherein the second portion is recessed in a directionfrom a bottom surface of the upper electrode toward a top surface of theupper electrode.

Also provided herein is a substrate processing apparatus including: awafer supporter configured to support a substrate; a focus ringconfigured to surround an outer perimeter of the substrate; an upperelectrode disposed apart from the wafer supporter in a first direction,wherein the first direction is a vertical direction perpendicular to aplane including a top surface of the substrate; and a shroud surroundingthe upper electrode and the wafer supporter, wherein the upper electrodeincludes: a first electrode configured to face the substrate; and asecond electrode configured to face the focus ring, the second electrodesurrounding the first electrode and extending beyond the focus ring in aradial direction with respect to a center axis of the upper electrode,wherein a bottom surface of the second electrode is recessed in adirection from the bottom surface of the second electrode toward a topsurface of the second electrode.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments will be more clearly understood from the following detaileddescription taken in conjunction with the accompanying drawings inwhich:

FIG. 1 is a cross-sectional view for describing a substrate processingapparatus according to embodiments;

FIG. 2 is a partial cross-sectional view of an upper electrode accordingto

embodiments;

FIGS. 3, 4A and 4B are graphs showing experiment results associated withan experiment example and an experiment result of a comparative example,for showing a comparison of effects of an upper electrode according toembodiments;

FIGS. 5A, 5B, 5C and 5D are cross-sectional views for describing upperelectrodes according to other embodiments;

FIG. 6A is a partial cross-sectional view of a substrate processingapparatus of a comparative example, and FIG. 6B is a graph showing acontour of a plasma density of a plasma region in the substrateprocessing apparatus of the comparative example;

FIG. 7A is a partial cross-sectional view of a substrate processingapparatus of an experiment example, and FIG. 7B is a graph showing acontour of a plasma density of a plasma region in the substrateprocessing apparatus of the experiment example; and

FIGS. 8 and 9 are graphs for describing effects of upper electrodesaccording to embodiments.

DETAILED DESCRIPTION OF THE EMBODIMENTS

Hereinafter, embodiments will be described in detail with reference tothe accompanying drawings. Like numeral references refer to likeelements, and their repetitive descriptions are omitted.

FIG. 1 is a cross-sectional view for describing a substrate processingapparatus 100 according to embodiments.

Referring to FIG. 1 , the substrate processing apparatus 100 may includea chamber 110, a substrate supporter 120, a focus ring supporter 130, afocus ring 135, a shroud 140, and an upper electrode 150.

The substrate processing apparatus 100 may perform plasma treatment on asubstrate Sb. The substrate processing apparatus 100 may perform one ofan ion beam etching process based on plasma, a material film depositionprocess based on plasma, and an ion cleaning process based on plasma onthe substrate Sb. Hereinafter, an embodiment where the substrateprocessing apparatus 100 performs an ion beam etching process based onplasma will be mainly described. However, those of ordinary skill in theart may easily implement an embodiment where the substrate processingapparatus 100 performs an ion cleaning process based on plasma and adeposition process based on plasma, based on description given herein.

The substrate Sb may include, for example, silicon (Si). The substrateSb may include a semiconductor element, such as germanium (Ge), or acompound semiconductor such as silicon carbide (SiC), gallium arsenide(GaAs), indium arsenide (InAs), or indium phosphide (InP).

According to some embodiments, the substrate Sb may have a silicon oninsulator (SOI) structure. The substrate Sb may include a buried oxidelayer formed on a front surface of the substrate Sb. According to someembodiments, the substrate Sb may include a conductive region (forexample, an impurity-doped well) formed on the front surface of thesubstrate Sb. According to some embodiments, the substrate Sb may havevarious isolation structures such as shallow trench isolation (STI) forisolating the doped well. Although not shown, various material layersand various patterns including different materials may be formed on thefront surface of the substrate Sb.

The substrate processing apparatus 100 may correspond to capacitivelycoupled plasma (CCP) equipment, but is not limited thereto. For example,the substrate processing apparatus 100 may be implemented with arbitrarydifferent suitable equipment such as CCP cathode equipment, inductivelycoupled plasma (ICP) equipment, transformer coupled plasma (TCP)equipment, and remote microwave plasma generating and transferringequipment.

The chamber 110 may provide an internal space for processing thesubstrate Sb. The chamber 110 may separate the internal space forprocessing the substrate Sb from the outside. The chamber 110 mayinclude clean room equipment for adjusting pressure and a temperature ata high precision level. The chamber 110 may provide a space whereelements included in the substrate processing apparatus 100 is disposed.A plasma region PLR, where plasma is generated, may be defined in thechamber 110. The chamber 110 may be approximately cylindrical in shape,but is not limited thereto.

The substrate supporter 120 may support the substrate Sb. The substratesupporter 120 may include an electrostatic chuck which fixes thesubstrate Sb by using an electrostatic force, but is not limitedthereto. The substrate supporter 120 may include an internal heatingwire structure for controlling a temperature of the substrate Sb.

Radio frequency (RF) source power RSP for generating plasma and RF biaspower RBP for accelerating the generated plasma may be applied to thesubstrate supporter 120. The RF source power RSP may have a frequency oftens MHz (for example, 60 MHz, 40 MHz, etc.), and the RF bias power RBPmay have a frequency of hundreds kHz to several MHz (for example, 400kHz, 2 MHz, etc.).

The focus ring supporter 130 may be disposed adjacent to the substratesupporter 120. The focus ring supporter 130 may support the focus ring135 and may surround an outer periphery of the substrate supporter 120.

The focus ring 135 may surround the outer periphery of the substrate Sb.The focus ring 135 may limit plasma to a space on the substrate Sb,optimize the performance of processing an edge of the substrate Sb, andprotect the substrate supporter 120 from damage caused by plasma and/orthe like.

The shroud 140 may limit the plasma region PLR to an inner portion ofthe space on the substrate Sb. The shroud 140 may surround an outerperimeter of each of the substrate supporter 120 and the upper electrode150. In an embodiment, the shroud 140 may include a C-shroud. The shroud140 may include a semiconductor material such as Si and polysilicon. Theshroud 140 may include at least one slot so that a gas provided to thechamber 110 is vented to the outside of the chamber 110.

According to embodiments, a reference voltage GND may be applied to theupper electrode 150. According to embodiments, the upper electrode 150may include a gas distribution apparatus, such as a showerhead, whichintroduces and distributes process gases.

The upper electrode, like the substrate Sb, may have rotationalsymmetricity, also referred to herein as radial symmetry about a centeraxis. According to embodiments, the upper electrode 150 may include aninternal electrode 151 in a center region and an external electrode 155surrounding the internal electrode 151.

Hereinafter, a direction of a center axis CX of the upper electrode 150may be defined as a Z direction, and two directions vertical to the Zdirection may be defined as an X direction and a Y direction. The Xdirection may be vertical to the Y direction. Unless separatelydescribed, definition of each direction may be the same as FIG. 1 . TheZ direction may be referred to as vertical.

The internal electrode 151 may face the substrate Sb and may have adiameter which is greater than that of the substrate Sb. The internalelectrode 151 may face the substrate Sb and may have a diameter which isabout 1 to 1.2 times a diameter of the substrate Sb. For example, whenthe diameter of the substrate Sb is about 150 mm, the diameter of theinternal electrode 151 may range from about 150 mm to about 180 mm, andwhen the diameter of the substrate Sb is about 200 mm, the diameter ofthe internal electrode 151 may range from about 200 mm to about 240 mm.Also, when the diameter of the substrate Sb is about 300 mm, thediameter of the internal electrode 151 may range from about 300 mm toabout 360 mm, and when the diameter of the substrate Sb is about 450 mm,the diameter of the internal electrode 151 may range from about 450 mmto about 540 mm. Hereinafter, for convenience of description, an examplewhere the diameter of the substrate Sb is about 300 mm will bedescribed.

Here, a structure of the upper electrode 150 will be described in moredetail with reference to FIG. 2 .

FIG. 2 is a partial cross-sectional view of an upper electrode 150according to embodiments. The upper electrode 150 may have rotationalsymmetricity with respect to a center axis CX thereof. Therefore, adescription of a portion (i.e., a portion illustrated in FIG. 2 ) at oneside of the center axis CX may be substantially identically applied to adescription of a portion (i.e., a portion not illustrated in FIG. 2 ) atthe other side of the center axis CX.

Referring to FIGS. 1 and 2 , a planar shape of an internal electrode 151may be a circular shape, and a planar shape of an external electrode 155may be a ring shape. In some embodiments, a ring shape exhibits radialsymmetry with a central point, thus “ring shape.” The external electrode155 may surround the internal electrode 151. According to embodiments,the external electrode 155 may include a concentric ring which surroundsthe internal electrode 151.

The internal electrode 151 may have a thickness which depends on aradial position with respect to a center axis thereof. For example,thickness may vary as function of radius (distance from the centeraxis). A top surface 151T of the internal electrode 151 may haveapproximately planar shape, but is not limited thereto. For example, thetop surface 151T of the internal electrode 151 may include aconcave-convex structure, which is based on a plurality of holes forenabling the internal electrode 151 to operate as a showerhead, and afastening structure for coupling peripheral elements (for example, thechamber 110).

Here, in a case where the internal electrode 151 is equipped in thechamber 110, a bottom surface 151B of the internal electrode 151 may bea surface facing the substrate Sb, and the top surface 151T of theinternal electrode 151 may be an opposite surface of the bottom surface151B of the internal electrode 151.

An etching speed and etching uniformity of the substrate processingapparatus 100 may be based on, for example, dimensions of elements ofthe substrate processing apparatus 100. Main elements for affecting theetching speed and etching uniformity of the substrate processingapparatus 100 may include a distance profile between a top surface ofthe substrate Sb and bottom surfaces 151B and 155B of an upper electrode150.

The etching speed of the substrate processing apparatus 100 may varybased on a position of a surface of the substrate Sb up to an outerperimeter of the substrate Sb from a center portion of the substrate Sb.Factors causing a change in etching result according to the position onthe substrate Sb, may include sheath bending, ion incidence angle tilt,and a radial variation of a plasma density. Since electrons are lighterthan ions, they can escape the plasma at a much faster rate than ions ifthere are no obstacles. Most of the electrons are depleted at a boundarybetween the plasma and the electrode or the sample, where only cationsand neutrals are formed. The boundary where electrons are depleted iscalled plasma sheath.

The sheath bending and the ion incidence angle tilt may cause tilting ofa sidewall of a high aspect ratio etch structure (for example, a contacthole), and the radial variation of the plasma density may cause a radialvariation of each of an etching speed and an etch depth.

Elements of the substrate processing apparatus 100 affecting processingof the substrate Sb may include the upper electrode 150 including ashowerhead, a plasma limitation shroud 140, the substrate supporter 120including a baseplate, and the focus ring 135.

When an upper electrode including a flat bottom surface is used for asubstrate processing apparatus using plasma, RF source power applied tothe substrate processing apparatus may cause a peak of a plasma densityin a center region of a substrate, and RF bias power may cause a peak ofa plasma density in an edge region (for example, a region of 80 mm to150 mm from a center of the substrate) of the substrate. Therefore, aplasma density contour including a radial profile having a W-shape maybe formed in a plasma region. That a radial profile of the plasmadensity contour has a W-shape may denote that a concentration of plasmaapplied to a plasma etching process performed on a substrate isnon-uniform.

A non-uniform plasma distribution may cause non-uniform etchingperformed on a substrate. Recently, as a degree of integration and anaspect ratio of each semiconductor device increase, a tolerance of aprofile gradient may be reduced, and due to this, a device defect mayoccur due to a small gradient which occurs in a sidewall of a highaspect ratio structure. A gradient may refer to a rate of change ofplasma density.

The bottom surface 151B of the internal electrode 151 according toembodiments may include a profile based on a radial-direction positionthereof. The profile of the bottom surface 151B depending on theradial-direction position may include a geometrical structure and adimension for uniformly controlling a radial-direction distribution ofplasma. A uniformity of a plasma distribution of the plasma region PLRmay be enhanced by the profile, based on the radial-direction position,of the bottom surface 151B. According to embodiments, the profile of thebottom surface 151B may continuously vary in all of the bottom surface151B.

Hereinafter, a variation of the profile of the bottom surface 151B withrespect to the top surface 151T will be described in detail. A variationof the profile of the bottom surface 151B with respect to the topsurface 151T described below, may also be similarly applied to anarbitrary plane with a center axis CX as a normal line thereof and atthe same side as the upper surface 151T. Here, a plane disposed at thesame side as the top surface 151T may denote a plane between the topsurface 151T and the bottom surface 151B or a plane which is apart fromthe bottom surface 151B with the top surface 151T therebetween.

A height of the bottom surface 151B from a reference surface may bebased on a radial position with respect to the center axis CX of theinternal electrode 151. The bottom surface 151B may be farthest awayfrom the reference surface (for example, the top surface 151T) withrespect to a center of the internal electrode 151. Therefore, a centerthickness d0 of the internal electrode 151 may be a maximum thickness ofthe internal electrode 151.

The bottom surface 151B may be closer to the reference surface (forexample, the top surface 151T) from the center axis CX to a first radiusR1 of the internal electrode 151. A distance between the bottom surface151B and the reference surface (for example, the top surface 151T) maybe shortest at the first radius R1. The first radius R1 may be a localminimum point of a height (i.e., a Z-direction distance) of the bottomsurface 151B with respect to the top surface 151T.

A thickness of the internal electrode 151 may decrease from the centerof the internal electrode 151 to the first radius R1. The internalelectrode 151 may have a first thickness d1, which is a minimumthickness at the first radius R1. A thickness of a portion of theinternal electrode 151 between the center axis CX of the internalelectrode 151 and the first radius R1, may be greater than the firstthickness d1 and less than the center thickness d0 of the internalelectrode 151. According to embodiments, the first radius R1 may be lessthan a radius RS of the substrate Sb. According to embodiments, thefirst radius R1 may range from about 60 mm to about 120 mm, but is notlimited thereto.

The bottom surface 151B may be farther away from the reference surface(for example, the top surface 151T) from the first radius R1 of theinternal electrode 151 to a second radius R2 of the internal electrode151. The second radius R2 may be a local maximum point of the height(i.e., the Z-direction distance) of the bottom surface 151B with respectto the top surface 151T. The local maximum point may be defined as anapex 151Ap, and the apex 151Ap may have a ring shape corresponds to acircumference of the second radius R2. According to embodiments, aradial gradient of the bottom surface 151B near the apex 151Ap maycontinuously vary. For example, a slope of the bottom surface asmeasured in a radial direction may vary in a smooth way. Therefore, auniformity of a plasma density distribution in the plasma region PLR maybe more enhanced. According to embodiments, a radial gradient of aprofile of the bottom surface 151B near the apex 151Ap may be close to0. According to embodiments, a radial gradient of a profile of thebottom surface 151B at the apex 151Ap may be 0, but is not limitedthereto.

A thickness of the internal electrode 151 may increase from the firstradius R1 to the second radius R2. The internal electrode 151 may have asecond thickness d2 at the second radius R2. A thickness of a portion ofthe internal electrode 151 between the first radius R1 and the secondradius R2 may be greater than the first thickness d1 and less than thesecond thickness d2.

According to embodiments, the second radius R2 may be greater than theradius RS of the substrate Sb. According to embodiments, the secondradius R2 may be within a range which is 1 to 1.2 times the radius RS ofthe substrate Sb. According to embodiments, the second radius R2 mayrange from about 150 mm to about 180 mm, but is not limited thereto.According to embodiments, the second radius R2 may range from about 160mm to about 175 mm, but is not limited thereto. According toembodiments, the apex 151Ap may overlap the focus ring 135 in a Zdirection.

According to embodiments, the internal electrode 151 may be providedwhere the apex 151Ap of the bottom surface 151B is within a range whichis 1 to 1.2 times the radius RS of the substrate Sb, and thus, theetching performance of a high aspect ratio hole of the substrateprocessing apparatus 100 may be enhanced. Here, the etching processusing plasma includes plasma sputtering, radical etching and reactiveion etching. Aspect ratio may be a ratio of height to width. The etchingperformance of the high aspect ratio hole of the substrate processingapparatus 100, as described below with reference to FIG. 3 , may becharacterized by eccentricity between a top surface and a bottom surfaceof the high aspect ratio hole. Here, the eccentricity of the uppersurface and the lower surface may be parameterized from misalignment ofthe center of the upper surface and the center of the lower surface. Theeccentricity of the high aspect ratio hole can cause circuit failure dueto unintended short or open.

The bottom surface 151B may be closer to the reference surface (forexample, the top surface 151T) from the second radius R2 of the internalelectrode 151 to a third radius R3 of the internal electrode 151. Here,the third radius R3 may be a radius of the internal electrode 151.

Therefore, the thickness of the internal electrode 151 may decrease fromthe second radius R2 to the third radius R3. The internal electrode 151may have a third thickness d3 at the third radius R3. A thickness of aportion of the internal electrode 151 between the second radius R2 andthe third radius R3 may be greater than the third thickness d3 and lessthan the second thickness d2. According to embodiments, the internalelectrode 151 may include a protrusion portion PP between first radiusR1 to a portion under the third radius R3 which protrudes downward. Theapex 151Ap may be a peak point of the protrusion portion PP. In someembodiments, a protrusion is a bump, a hump or a prominence such that asurface extends and then changes direction. In contrast, a flat surface,an angled surface or an oblique surface is a surface with a singletendency.

According to embodiments, a radial variation rate of a profile of thebottom surface 151B from the first radius R1 to the second radius R2 maybe less than a radial variation rate of the profile of the bottomsurface 151B from the second radius R2 to the third radius R3. Accordingto embodiments, a radial variation rate of a thickness of the internalelectrode 151 from the first radius R1 to the second radius R2 may beless than a radial variation rate of a thickness of the internalelectrode 151 from the second radius R2 to the third radius R3.

A first inflection point IP1 may be between the center axis CX and thefirst radius R1, and a second inflection point IP2 may be between thefirst radius R1 and the second radius R2. Therefore, a portion of thebottom surface 151B between the center axis CX and the first inflectionpoint IP1 may be convex, a portion of the bottom surface 151B betweenthe first inflection point IP1 and the second inflection point IP2 maybe concave, and a portion of the bottom surface 151B between the secondinflection point IP2 and the third radius R3 may be convex.

A portion, connecting a side surface (the bottom surface 151B) to thetop surface 151T, of the internal electrode 151 may contact an innersurface of an external electrode 155. Therefore, an internal radius ofthe external electrode 155 may also be the third radius R3. A thicknessof the internal electrode 151 may be substantially the same as that ofthe external electrode 155 at a contact surface between the internalelectrode 151 and the external electrode 155.

According to embodiments, a top surface 155T of the external electrode155 may be disposed on substantially the same plane as the top surface151T of the internal electrode 151. According to embodiments, a bottomsurface 155B of the external electrode 155 and the bottom surface 151Bof the internal electrode 151 may configure a continuous profile. Forexample, in some embodiments, there is not a step discontinuity or anabrupt change of direction of the overall surface passing from 151 to155 (see FIGS. 5B and 5D). Thus the surface, in some embodiments, iscontinuous without a step and without an abrupt change in direction.Thus the continuous surface is a smooth surface. According toembodiments, a reference voltage GND may be applied to the internalelectrode 151 and the external electrode 155, and due to the continuousprofile configured by the bottom surface 155B of the external electrode155 and the bottom surface 151B of the internal electrode 151, auniformity of an electric field distribution in the plasma region PLRmay be enhanced. Accordingly, the reliability of the substrateprocessing apparatus 100 may be enhanced.

The external electrode 155 may have substantially the same thicknessexcept for a fastening structure for coupling with the shroud 140. Theexternal electrode 155 may overlap at least a portion of the focus ring135 in the Z direction.

According to embodiments, the center thickness d0 may be greater thanthe second thickness d2, the second thickness d2 may be greater than thethird thickness d3, and the third thickness d3 may be greater than thefirst thickness d1.

Dimensions of the first to third radiuses R1 to R3, the center thicknessd0, and the first to third thicknesses d1 to d3 may be determined basedon a radial distribution target of plasma which is set. The dimensionsof the first to third radiuses R1 to R3, the center thickness d0, andthe first to third thicknesses d1 to d3 may be determined based on aposition of a plasma density peak and a radial variation of a plasmadensity. The dimensions of the first to third radiuses R1 to R3, thecenter thickness d0, and the first to third thicknesses d1 to d3 may bedetermined so that a radial non-uniformity of a plasma density isminimized by reducing the plasma density at a center peak and an edgepeak of the plasma density. Therefore, a gradient of an etch profile andetching non-uniformity caused by a non-uniform plasma densitydistribution may be minimized in etching a high aspect ratio hole of thesubstrate Sb processed by the substrate processing apparatus 100.

Hereinafter, effects of the substrate processing apparatus 100 includingthe upper electrode 150 according to embodiments will be described inmore detail with reference to FIGS. 3 to 4B.

FIGS. 3 to 4B are graphs showing an experiment result of an experimentexample and an experiment result of a comparative example, for showingan effect of an upper electrode 150 according to embodiments.

In more detail, FIG. 3 is a graph showing eccentricity of high aspectratio holes formed by a substrate processing apparatus of an experimentexample and eccentricity of high aspect ratio holes formed by asubstrate processing apparatus of a comparative example. Also, FIG. 4Ais a graph showing a density distribution of plasma of a plasma regionPLR (see FIG. 1 ) generated by the substrate processing apparatus of thecomparative example, and FIG. 4B is a graph showing a densitydistribution of plasma of a plasma region PLR (see FIG. 1 ) generated bythe substrate processing apparatus of the experiment example.

In FIGS. 3 to 4B, an upper electrode included in the substrateprocessing apparatus of the experiment example is substantially the sameas the upper electrode 150 described above with reference to FIGS. 1 and2 , and apex i.e., a point corresponding to the apex 151Ap (see FIG. 1 )of an upper electrode included in the substrate processing apparatus ofthe comparative example is disposed at a radius of about 150 mm.

Referring to FIG. 3 , a variation of an eccentricity parameter based onpositions of holes having a high aspect ratio formed in a wafer isshown. Here, the eccentricity parameter may be twice a maximumhorizontal distance between a center of a bottom surface of a hole and acenter of a top surface of the hole. Here, the maximum horizontaldistance between the center of the bottom surface of the hole and thecenter of the top surface of the hole may denote a rectilinear distancebetween the center of the bottom surface and the center of the topsurface orthographic-projected onto the bottom surface. The eccentricityparameter may characterize an degree of ideality of a sidewall profileof each of holes formed by a plasma process. In FIG. 3 , theeccentricity parameter is represented by an arbitrary unit (a.u.).

Referring to FIG. 3 , the experiment example has an eccentricitycharacteristic which is more uniform than that of the comparativeexample. In more detail, in a substrate processed by the substrateprocessing apparatus of the comparative example, first fluctuation F1where an eccentricity parameter value increases at a center portion (forexample, a position within a radial range of about 90 mm to about 130mm) of the substrate and second fluctuation F2 where an eccentricityparameter value increases at an edge portion (for example, a positionwithin a radial range of about 130 mm or more) of the substrate havebeen confirmed.

On the other hand, in a substrate Sb processed by a substrate processingapparatus 100 of the experiment example, it has been confirmed thatfirst and second fluctuations F1 and F2 of an eccentricity parameteroccurring in the substrate of the comparative example are removed.Therefore, it has been confirmed that an eccentricity parameter is lowand uniform over the entire surface of the substrate Sb processed by thesubstrate processing apparatus 100 of the experiment example.Particularly, it has been confirmed that a maximum value of an absolutevalue of an eccentricity parameter in the substrate Sb processed by thesubstrate processing apparatus 100 of the experiment example is equal toor less than half of an absolute value of an eccentricity parameter inthe substrate processed by the substrate processing apparatus of thecomparative example. In other words, it has been confirmed that asidewall profile of a high aspect ratio etch structure of the substrateSb processed by the substrate processing apparatus 100 of the experimentexample is improved.

In an upper electrode of the related art, despite variously changing aform, an increase in an eccentricity parameter of an edge region of asubstrate is not prevented. According to embodiments, by providing theupper electrode 150 where the second radius R2 corresponding to a radiusof the apex 151Ap ranges from about 150 mm to about 180 mm, a new effectof alleviating or eliminating the abnormalities occurring on the edge ofthe substrate Sb during the etching process is provided. Accordingly, ayield rate and reliability of semiconductor devices manufactured by thesubstrate processing apparatus 100 is increased.

Referring to FIGS. 1 to 4B, in the plasma region PLR, it has beenconfirmed that a plasma density contour according to the experimentexample is reduced more in radius-direction variation than a plasmadensity contour according to the comparative example.

In FIGS. 4A and 4B, the numerical values indicated on the contour linesrepresent the plasma density at each location in the plasma regions PLR.In FIGS. 4A and 4B, the plasma density is standardized so that itsmaximum is 1, which is a dimensionless quantity. Each contour is markedwith a numerical value indicating a plasma density as at that fixedvalue along the line marking the contour. Reading the graph to crosslines, is a direction of reading in which plasma density is changingquickly. As described above, the upper electrode 150 may provide thereference voltage, and thus, in FIGS. 4A and 4B, a profile of a 0.4contour of an uppermost end in a plasma region PLR may have a shapesimilar to that of a profile of a bottom surface of each of the upperelectrode according to the comparative example and the upper electrode150 according to the experiment example because a shape of the upperelectrode according to the comparative example and a shape of the upperelectrode 150 according to the experiment example are transferred.

In a vertical center region of the plasma region PLR (i.e., a regionnear a region where a 0.95 contour extends), it has been confirmed thateach of 0.9 contours of FIG. 4B has a radius distribution which isimproved to be more uniform than 0.9 contours of FIG. 4A.

Also, it has been confirmed that a 0.4 contour of a lowermost end in theplasma region PLR of FIG. 4B is more uniform than a 0.4 contour of alowermost end in the plasma region PLR of FIG. 4A. That is, it has beenconfirmed that a 0.4 contour of a lowermost end in the plasma region PLRof the substrate processing apparatus according to the experimentexample is substantially parallel in a radial direction. A 0.4 contourof a lowermost end may be a contour which is the most adjacent to thesubstrate Sb, and a substantially parallel 0.4 contour implies thatplasma treatment is performed over the entire surface of the substrateSb at the substantially the same plasma density. According toembodiments, a yield rate and reliability of semiconductor devicesmanufactured by the substrate processing apparatus 100 is increased.

FIGS. 5A to 5D are cross-sectional views for describing upper electrodes150 a, 150 b, 150 c, and 150 d according to other embodiments. In moredetail, FIGS. 5A to 5D are partial cross-sectional views correspondingto FIG. 2 .

For convenience, descriptions which are the same as or similar todescriptions given above with reference to FIGS. 1 to 4 are omitted, anda difference therebetween will be mainly described below.

Referring to FIG. 5A, the upper electrode 150 a may include an internalelectrode 151 a and an external electrode 155. Except for that an apex151Apa corresponding to a cusp is provided at a protrusion portion PPaof a bottom surface 151Ba, the internal electrode 151 a may be similarto the internal electrode 151 of FIG. 2 . A top surface 151Ta may be aflat surface like FIG. 2 .

According to some embodiments, a thickness of the internal electrode 151a may increase linearly from a first radius R1 to a second radius R2.According to some embodiments, a thickness of the internal electrode 151a may increase linearly from the second radius R2 to a third radius R3.Therefore, a radial gradient of a profile of a bottom surface 151Ba nearthe apex 151Apa may vary discontinuously.

Referring to FIG. 5B, an upper electrode 150 b may include an internalelectrode 151 and an external electrode 155 b. The external electrode155 b may be similar to the external electrode 155 of FIG. 2 and mayinclude a recess portion RP having a structure which is recessed from abottom surface 155Bb of the external electrode 155 b toward a topsurface 155Tb of the external electrode 155 b.

A distance between the bottom surface 155Bb and the top surface 155Tb ofthe external electrode 155 b may decrease from a third radius R3, whichis an internal radius of the external electrode 155 b, to a fourthradius R4. Therefore, a thickness of the external electrode 155 b maydecrease from the third radius R3 to the fourth radius R4. The externalelectrode 155 b may have a fourth thickness d4, which is a minimumthickness at the fourth radius R4. According to embodiments, the fourththickness d4 may be greater than a first thickness d1 and less than thethird thickness d3.

A distance between the bottom surface 155Bb and the top surface 155Tb ofthe external electrode 155 b may increase from the fourth radius R4 to afifth radius R5. Therefore, a thickness of the external electrode 155 bmay increase from the fourth radius R4 to the fifth radius R5. Theexternal electrode 155 b may have a fifth thickness d5 at the fifthradius R5. Except for a fastening part for a shroud 140 (see FIG. 1 ), athickness of the external electrode 155 b outside the fifth radius R5may be the fifth thickness d5 and may be substantially constant.According to embodiments, the fifth thickness d5 may be substantiallythe same as the third thickness d3, but is not limited thereto.

According to embodiments, an edge peak of a radial distribution of aplasma density may be reduced by the recess portion RP, which at leastpartially overlaps a focus ring 135 in a Z direction. Therefore, auniformity of a plasma distribution of a portion corresponding to anedge of a substrate Sb (see FIG. 1 ) may be enhanced.

Referring to FIG. 5C, an upper electrode 150 c may be similar to theupper electrode 150 of FIG. 2 and may be configured as a single elementwhere the internal electrode 151 and the external electrode 155 of FIG.2 are provided as one body. Therefore, a bottom surface 150B of theupper electrode 150 c may have a shape where the bottom surfaces 151Band 155B of FIG. 2 are provided as one body, and a top surface 155T ofthe upper electrode 150 c may have a shape where the top surfaces 151Tand 155T of FIG. 2 are provided as one body. Also, the bottom surface150B of the upper electrode 150 c may include a protrusion portion PPcdefined similar to FIG. 2 and an apex 150Ap of the protrusion portionPPc.

According to embodiments, the upper electrode 150 c may be provided in asingle structure which is electrically continuous, and a uniformity of areference voltage GND (see FIG. 1 ) provided by the upper electrode 150c may be enhanced. Accordingly, in a plasma region PLR (see FIG. 1 ), auniformity of a plasma distribution of a portion corresponding to anedge of a substrate Sb (see FIG. 1 ) may be enhanced.

Referring to FIG. 5D, an upper electrode 150 d may include an internalelectrode 151 d and an external electrode 155 d. The internal electrode151 d may be similar to the internal electrode 151 of FIG. 2 , and athird radius R3, which is a radius of the internal electrode 151 d, maybe substantially the same as a radius RS of a substrate Sb. Therefore,the internal electrode 151 d may not overlap a focus ring 135 (see FIG.1 ) in a Z direction. A second radius R2, corresponding to a radialposition of an apex 151Apd of a protrusion portion PPd of the internalelectrode 151 d, may be less than the radius RS of the substrate Sb (seeFIG. 1 ). A top surface 151Td of the internal electrode 151 d may be asubstantially flat surface like FIG. 2 .

The external electrode 155 d may be similar to the external electrode155 of FIG. 2 and may include a recess portion RP′ having a structurewhich is recessed from a bottom surface 155Bd of the external electrode155 d toward a top surface 155Td of the external electrode 155 d.

In the embodiment of FIG. 5D, the third radius R3, which is an internalradius of the recess portion RP′, and a fifth radius R5, which is anexternal radius of the recess portion RP′, may be the same as aninternal radius and an external radius of a focus ring 135 (see FIG. 1), respectively, but are not limited thereto. For example, the thirdradius R3 may be the same as the internal radius of the focus ring 135(see FIG. 1 ), and the fifth radius R5 may be the same as the externalradius of the focus ring 135 (see FIG. 1 ).

According to embodiments, the third radius R3 may be about 150 mm ormore, and the fifth radius R5 may be about 210 mm or less. According toembodiments, the fifth radius R5 may be about 180 mm or less.

An edge peak of a radial distribution of a plasma density may be reducedby the recess portion RP′, which at least partially overlaps the focusring 135 in the Z direction. Therefore, in a plasma region PLR (see FIG.1 ), a uniformity of a plasma distribution of a portion corresponding toan edge of the substrate Sb (see FIG. 1 ) may be enhanced.

FIG. 6A is a partial cross-sectional view of a substrate processingapparatus 100 cp of a comparative example, and FIG. 6B is a graphshowing a contour of a plasma density of a plasma region PLR in asubstrate processing apparatus of the related art. In FIG. 6B, a radialposition of the abscissa axis and a height from a substrate of theordinate axis are each represented by an arbitrary unit (a.u.).

Referring to FIGS. 6A and 6B, the substrate processing apparatus 100 cpof the comparative example may include a substrate supporter 120, afocus ring supporter 130, a focus ring 135, a shroud 140, and an upperelectrode 150 cp. The upper electrode 150 cp may include a bottomsurface which is a substantially planar surface. In the substrateprocessing apparatus 100 cp of the comparative example, it has beenconfirmed that a radial variation of a density of plasma generated nearan edge of a substrate Sb is large. Plasma generated within a radiusrange of about 150 mm to about 180 mm may affect a portion near the edgeof the substrate Sb. In the comparative example, it has been confirmedthat a uniformity of a plasma process near the edge of the substrate Sbis reduced due to a radial variation of a density of plasma generatedwithin a radius range of about 150 mm to about 180 mm.

FIG. 7A is a partial cross-sectional view of a substrate processingapparatus 100 ex of an experiment example, and FIG. 7B is a graphshowing a contour of a plasma density of a plasma region PLR in thesubstrate processing apparatus 100 ex of the experiment example. In FIG.7B, a radial position of the abscissa axis and a height from a substrateof the ordinate axis are each represented by an arbitrary unit (a.u.).

Referring to FIGS. 7A and 7B, the substrate processing apparatus 100 exmay include a substrate supporter 120, a focus ring supporter 130, afocus ring 135, a shroud 140, and an upper electrode 150 ex. The upperelectrode 150 ex may include a substrate facing portion 150S including abottom surface which is a substantially planar surface and a focus ringfacing portion 150FR where a recess portion RP is provided. It has beenconfirmed that, in a contour of a density of plasma generated by thesubstrate processing apparatus 100 ex of the experiment example, aradial variation is reduced compared to the contour of FIG. 6B.Particularly, it has been confirmed that a non-uniformity of a plasmaconcentration of a portion with horizontal distance from the center ofplasma region ranging from about 150 mm to about 180 mm affecting aetching of a portion near an edge of a substrate Sb is largely reduced.

FIGS. 8 and 9 are graphs for describing effects of upper electrodesaccording to embodiments.

In FIGS. 8 and 9 , in a comparative example, as in FIG. 6A, an upperelectrode 150 cp may include a flat bottom surface, and a recess portionmay not be provided at a portion facing a focus ring 135 of the upperelectrode 150 cp. In first to fourth experiment examples, as in FIG. 7A,an upper electrode 150 ex may include a focus ring 150FR where a recessportion RP is provided. In first to fourth experiment examples, a depthof the recess portion RP may increase in order.

Referring to FIG. 8 , comparing with a comparative example, it has beenconfirmed that a uniformity of a sheath thickness is enhanced in thefirst to fourth experiment examples. As described above, a variation ofa sheath thickness may cause eccentricity in forming a high aspect ratiohole, and thus, by enhancing a uniformity of a sheath thickness, auniformity of plasma treatment may also be enhanced. Also, in the firstto fourth experiment examples, it has been confirmed that a recessportion having a large depth within a predetermined range is provided,and thus, a uniformity of a plasma sheath is enhanced.

FIG. 9 shows an eccentricity parameter of patterns formed at an edge ofeach of substrates processed by the comparative example and the first tofourth experiment examples.

Referring to FIG. 9 , it has been confirmed that an eccentricityparameter of an edge of each of substrates processed by the first tofourth experiment examples is lower than the comparative example. It hasbeen confirmed that a recess portion having a large depth within apredetermined range is provided based on an eccentricity parameter ofeach of the first to fourth experiment examples, and thus, the etchingperformance of a substrate processing apparatus is enhanced.

While embodiments have been shown and described with reference toembodiments thereof, it will be understood that various changes in formand details may be made therein without departing from the spirit andscope of the following claims.

What is claimed is:
 1. A substrate processing method using a substrateprocessing apparatus, the substrate processing method comprising:preparing a substrate; forming a plasma; and applying, by the substrateprocessing apparatus, a plasma-etching process to the substrate, whereinthe substrate processing apparatus includes an upper electrode, and theupper electrode includes: a bottom surface including a center region andan edge region, the edge region having a ring shape and surrounding thecenter region, and a first protrusion portion protruding toward theplasma from the edge region and having the ring shape, wherein the firstprotrusion portion includes a first apex corresponding to a localmaximum thickness of the upper electrode in a vertical direction towardthe plasma, the bottom surface configured to face the substrate with theplasma between, and a first distance, which is a first radial-directiondistance between the first apex and a center axis of the upperelectrode, is greater than a radius of the substrate.
 2. The substrateprocessing method of claim 1, wherein the first distance is a distancebetween the first apex and the center axis, and the first distance isgreater than the radius of the substrate and less than or equal to about1.2 times the radius of the substrate.
 3. The substrate processingmethod of claim 1, wherein the first distance is within a rangebeginning at and including about 150 mm and extending to and includingabout 180 mm.
 4. The substrate processing method of claim 1, wherein thecenter region and the edge region of the bottom surface arecharacterized by a continuous surface which is a smooth surface.
 5. Thesubstrate processing method of claim 1, wherein a thickness of thecenter region of the bottom surface varies with radial position, theradial position taken with respect to the center axis.
 6. The substrateprocessing method of claim 1, wherein the first apex has the ring shapeand the first distance is a second radius of the ring shape.
 7. Thesubstrate processing method of claim 1, wherein the substrate processingapparatus further includes a recess portion in the edge region of thebottom surface, wherein a recess of the recess portion is in a directionfrom the bottom surface of the upper electrode toward a top surface ofthe upper electrode.
 8. The substrate processing method of claim 7,wherein a second radial-direction distance between a minimum thicknessof the recess portion and the center axis is greater than the firstdistance.
 9. A substrate processing method using a substrate processingapparatus, the substrate processing method comprising: preparing asubstrate; forming a plasma; and applying, by the substrate processingapparatus, a plasma-etching process to the substrate, wherein thesubstrate processing apparatus includes an upper electrode, and theupper electrode includes a bottom surface configured to face thesubstrate processed by the substrate processing apparatus, the bottomsurface includes a first protrusion portion having a ring shape, thefirst protrusion portion includes a first apex corresponding to a localmaximum thickness of the upper electrode in a vertical direction, thebottom surface facing the substrate, a first distance, which is adistance between the first apex and a center axis of the upperelectrode, is beginning at and including about 150 mm and extending toand including about 180 mm, the bottom surface further includes a pointof minimum thickness corresponding to a radial local minimum point, andthe point of minimum thickness occurs between the center axis and thefirst protrusion portion.
 10. The substrate processing method of claim9, wherein a portion of the upper electrode, which is between the firstdistance and a second distance which is greater than the first distance,has a thickness which decreases with increasing radial distance from thecenter axis.
 11. The substrate processing method of claim 10, whereinthe second distance is 180 mm or less.
 12. The substrate processingmethod of claim 9, wherein the upper electrode has rotational symmetrywith respect to the center axis, and the first distance is greater thana radius of the substrate.
 13. The substrate processing method of claim9, wherein the upper electrode further includes: a first portionconfigured to face the substrate; and a second portion configured toface a focus ring, the second portion surrounding the first portion,wherein the second portion is recessed in a direction from the bottomsurface of the upper electrode toward a top surface of the upperelectrode.
 14. A substrate processing method using a substrateprocessing apparatus, the substrate processing method comprising:preparing a substrate; forming a plasma; and applying, by the substrateprocessing apparatus, a plasma-etching process to the substrate, whereinthe substrate processing apparatus includes: a wafer supporterconfigured to support the substrate, a focus ring configured to surroundan outer perimeter of the substrate, an upper electrode disposed apartfrom the wafer supporter in a first direction, wherein the firstdirection is a vertical direction perpendicular to a plane including atop surface of the substrate, and a shroud surrounding the upperelectrode and the wafer supporter, wherein the upper electrode includes:a first electrode configured to face the substrate, and a secondelectrode configured to face the focus ring, the second electrodesurrounding the first electrode and extending beyond the focus ring in aradial direction with respect to a center axis of the upper electrode,wherein a bottom surface of the second electrode includes a recessedportion recessed in a direction from the bottom surface of the secondelectrode toward a top surface of the second electrode.
 15. Thesubstrate processing method of claim 14, wherein a single structureincludes the first electrode and the second electrode such that thesingle structure is electrically continuous.
 16. The substrateprocessing method of claim 14, wherein the first electrode and thesecond electrode are separate electrodes, and a first bottom surface ofthe first electrode and a second bottom surface of the second electrodeare characterized by a continuous surface which is a smooth surface. 17.The substrate processing method of claim 14, wherein an inner radius ofthe second electrode is greater than an outer radius of the substrate,wherein the inner radius of the second electrode and the outer radius ofthe substrate are with respect to the center axis.
 18. The substrateprocessing method of claim 14, wherein the second electrode has athickness in the first direction from the bottom surface of the secondelectrode toward the top surface of the second electrode, whereby thethickness of the second electrode varies with distance from the centeraxis.
 19. The substrate processing method of claim 14, wherein thesecond electrode includes a ring-shaped portion surrounding the firstelectrode, and an internal radius of the second electrode is 150 mm ormore, and an external radius of the second electrode is 210 mm or less.20. The substrate processing method of claim 14, wherein the secondelectrode includes a ring-shaped portion surrounding the firstelectrode, the second electrode has a first thickness at an internalradius of the second electrode, the second electrode has a secondthickness at an external radius of the second electrode, and a thirdthickness between the internal radius and the external radius of thesecond electrode is less than each of the first thickness and the secondthickness.